VS-HFA16TB120PBF, vs-hfa16tb120-n3 www.vishay.com vishay semiconductors revision: 18-aug-11 1 document number: 94060 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? ultrafast soft recovery diode, 16 a features ? ultrafast and ultrasoft recovery ? very low i rrm and q rr ? compliant to rohs directive 2002/95/ec ? designed and qualified according to jedec-jesd47 ? halogen-free according to iec 61249-2-21 definition (-n3 only) benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description vs-hfa16tb120... is a state of the art ultrafast recovery diode. employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any re ctifier previously available. with basic ratings of 1200 v and 16 a continuous current, the vs-hfa16tb120... is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultrafast recovery time, the hexfred ? product line features extremely low values of peak recovery current (i rrm ) and does not exhibit an y tendency to snap-off during the t b portion of recovery. the hexfred features combine to offer designers a re ctifier with lower noise and significantly lower switching lo sses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce s nubbing, component count and heatsink sizes. the hexfred vs-hfa16tb120... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applicatio ns where high speed, high efficiency is needed. product summary package to-220ac i f(av) 16 a v r 1200 v v f at i f 3.0 v t rr typ. 30 ns t j max. 150 c diode variation single die to-220ac anode 1 3 cathode base cathode 2 absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 1200 v maximum continuous forward current i f t c = 100 c 16 a single pulse forward current i fsm 190 maximum repetitive forward current i frm 64 maximum power dissipation p d t c = 25 c 151 w t c = 100 c 60 operating junction and storage temperature range t j , t stg - 55 to + 150 c
VS-HFA16TB120PBF, vs-hfa16tb120-n3 www.vishay.com vishay semiconductors revision: 18-aug-11 2 document number: 94060 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 1200 - - v maximum forward voltage v fm i f = 16 a see fig. 1 -2.53.0 i f = 32 a - 3.2 3.93 i f = 16 a, t j = 125 c - 2.3 2.7 maximum reverse leakage current i rm v r = v r rated see fig. 2 -0.7520 a t j = 125 c, v r = 0.8 x v r rated - 375 2000 junction capacitance c t v r = 200 v see fig. 3 - 27 40 pf series inductance l s measured lead to lead 5 mm from package body -8.0-nh dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units reverse recovery time see fig. 5 and 10 t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 30 - ns t rr1 t j = 25 c i f = 16 a di f /dt = 200 a/s v r = 200 v - 90 135 t rr2 t j = 125 c - 164 245 peak recovery current see fig. 6 i rrm1 t j = 25 c - 5.8 10 a i rrm2 t j = 125 c - 8.3 15 reverse recovery charge see fig. 7 q rr1 t j = 25 c - 260 675 nc q rr2 t j = 125 c - 680 1838 peak rate of fall of recovery current during t b see fig. 8 di (rec)m /dt1 t j = 25 c - 120 - a/s di (rec)m /dt2 t j = 125 c - 76 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units lead temperature t lead 0.063" from case (1.6 mm) for 10 s - - 300 c thermal resistance, junction to case r thjc - - 0.83 k/w thermal resistance, junction to ambient r thja typical socket mount - - 80 thermal resistance, case to heatsink r thcs mounting surface, flat, sm ooth and greased - 0.50 - weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case st yle to-220ac hfa16tb120
VS-HFA16TB120PBF, vs-hfa16tb120-n3 www.vishay.com vishay semiconductors revision: 18-aug-11 3 document number: 94060 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop vs. instantaneous forward current fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 94060_01 v fm - forward voltage drop (v) 0 0.1 1 100 2 468 i f - instantaneous forward current (a) 10 t j = 150 c t j = 125 c t j = 25 c 0 v r - reverse voltage (v) i r - reverse current (a) 200 600 400 0.1 0.01 94060_02 1 10 100 1000 800 1000 1200 t j = 150 c t j = 125 c t j = 25 c 100 1 100 1000 v r - reverse voltage (v) c t - junction capacitance (pf) 94060_03 10 1 10 1000 10 000 t j = 25 c 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal response 0.01 94060_04 10 100 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c single pulse (thermal response) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 2 t 1 t p dm
VS-HFA16TB120PBF, vs-hfa16tb120-n3 www.vishay.com vishay semiconductors revision: 18-aug-11 4 document number: 94060 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical reverse recovery time vs. di f /dt (per leg) fig. 6 - typical recovery current vs. di f /dt (per leg) fig. 7 - typical stored charge vs. di f /dt (per leg) fig. 8 - typical di (rec)m /dt vs. di f /dt (per leg) 270 100 1000 di f /dt (a/s) t rr (ns) 20 120 70 170 94060_05 220 v r = 200 v t j = 125 c t j = 25 c i f = 16 a i f = 8 a i rr (a) di f /dt (a/s) 100 1000 0 30 10 15 20 25 5 94057_06 v r = 200 v t j = 125 c t j = 25 c i f = 16 a i f = 8 a q rr (nc) di f /dt (a/s) 100 1000 0 1600 1400 400 800 1200 200 600 1000 94057_07 v r = 200 v t j = 125 c t j = 25 c i f = 16 a i f = 8 a di (rec)m /dt (a/s) di f /dt (a/s) 100 1000 10 10 000 100 1000 94057_08 i f = 16 a i f = 8 a v r = 200 v t j = 125 c t j = 25 c
VS-HFA16TB120PBF, vs-hfa16tb120-n3 www.vishay.com vishay semiconductors revision: 18-aug-11 5 document number: 94060 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-HFA16TB120PBF, vs-hfa16tb120-n3 www.vishay.com vishay semiconductors revision: 18-aug-11 6 document number: 94060 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-HFA16TB120PBF 50 1000 an tistatic plastic tube vs-hfa16tb120-n3 50 1000 an tistatic plastic tube links to related documents dimensions www.vishay.com/doc?95221 part marking information to-220acpbf www.vishay.com/doc?95224 to-220ac-n3 www.vishay.com/doc?95068 2 - hexfred ? family 4 - current rating (16 = 16 a) 4 5 - package: 4 tb = to-220ac 3 - electron irradiated 6 7 - voltage rating (120 = 1200 v) 1 - vishay semiconductors product device code 5 1 3 2 4 6 7 vs- hf a 16 tb 120 pbf - environmental digit: pbf = lead (pb)-free and rohs compliant -n3 = halogen-free, rohs compliant and totally lead (pb)-free
document number: 95221 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 07-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ac outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are m easured at the outermost extrem es of the plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimension: inches (6) thermal pad contour optional with in dimensions e, h1, d2 and e1 (7) dimension e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to-220, d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e1 6.86 8.89 0.270 0.350 6 a1 1.14 1.40 0.045 0.055 e2 - 0.76 - 0.030 7 a2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105 b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208 b1 0.38 0.97 0.015 0.038 4 h1 6.09 6.48 0.240 0.255 6, 7 b2 1.20 1.73 0.047 0.068 l 13.52 14.02 0.532 0.552 b3 1.14 1.73 0.045 0.068 4 l1 3.32 3.82 0.131 0.150 2 c 0.36 0.61 0.014 0.024 l3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 l4 0.76 1.27 0.030 0.050 2 d 14.85 15.25 0.585 0.600 3 ? p 3.54 3.73 0.139 0.147 d1 8.38 9.02 0.330 0.355 q 2.60 3.00 0.102 0.118 d2 11.68 12.88 0.460 0.507 6 ? 90 to 93 90 to 93 e 10.11 10.51 0.398 0.414 3, 6 13 2 d d1 h1 q detail b c a b l e1 lead tip l4 l3 e e2 ? p 0.015 a b mm 0.014 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220ac (6) (6) (7) (6) (7) view a - a e1 (6) d2 (6) h1 thermal pad e detail b d l1 d 123 c c 2 x b2 2 x b
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